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| Data Sheet No. 2N2857UB Type 2N2857UB Geometry 0011 Polarity NPN Qual Level: JAN - JANS Features: * * * * Low power, ultra-high frequency transistor. Housed in a cersot case. Also available in chip form using the 0011 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/343 which Semicoa meets in all cases. Generic Part Number: 2N2857 REF: MIL-PRF-19500/343 Cersot Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC TJ TSTG Rating 15 30 3.0 40 -65 to +200 -65 to +200 Unit V V V mA o C C o Data Sheet No. 2N2857UB Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 1 A Collector-Emitter Breakdown Voltage IC = 3 mA Emitter-Base Breakdown Voltage IE = 10 A Collector-Emitter Cutoff Current VCB = 15 V Collector-Base Cutoff Current VCB = 15 V Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICES ICBO Min 30 15 3.0 ----- Max ------100 10 Unit V V V nA nA ON Characteristics Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1 mA Base-Emitter Saturation Voltage IC = 150 mA, IB = 1 mA Symbol VCE(sat) VBE(sat) Min ----- Max 0.4 1.0 Unit V dc V dc Small Signal Characteristics Fo rdCurenT sfeR o rwa r t ran r ati IC= 3 mA, V CE = 1 V ICCE 2 mA, V lead floating = = V, case 6 Magnitude of Common Emitter Short Circuit Forward Current Transfer Ratio VCE = 6 V, IC = 5 mA, f = 100 MHz Small Signal Power Gain Colec -BaeFeebakCapciane l tor s dc atc VCB = 10 V, IE = 2 mA, 100 kHz < f < 1 MHz Symbol hFE hFE |hFE| GP E CCB rb'CC NF Min 30 50 10 12 .5 --4.0 --- Max 150 220 21 1 2 1.0 15 4.5 Unit ------dB pF ps dB Collector-Base Time Constant VCE = 6 V, IE = 2 mA, f = 31.9 MHz Noise Figure VCE = 6 V, IC = 1.5 mA,rg = 50 ohms, 450 MHz |
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